kw.\*:("ZINC SELENIURE")
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DEFAUTS DE STRUCTURE DANS UN MONOCRISTAL DE SELENIURE DE ZINC.RIVAUD G; PAVIS B; LEMERCIER M et al.1974; J. MICR.; FR.; DA. 1974; VOL. 19; NO 2; PP. 113-118; H.T. 2; ABS. ANGL.; BIBL. 17 REF.Article
BIRECTIONAL TRANSMITTANCE DISTRIBUTION FUNCTION MEASUREMENTS ON ZNSEDERENIAK EL; BROD LG; HUBBS JE et al.1982; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 24; PP. 4421-4425; BIBL. 7 REF.Article
OXYDATION DE ZNSE A L'AIRSTEPANOVA ND; KALINKIN IP; SOKOLOV VA et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 1030-1034; BIBL. 11 REF.Article
ORIENTATION OF ZNSE CRYSTALS BY CHEMICAL ETCHING TECHNIQUE.OCZKOWSKI H; POPLAWSKI Z.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 154-156; BIBL. 9 REF.Article
THERMOLUMINESCENCE MODEL WITH INTRA-PAIR METASTABLE STATEOCKOWSKI HL.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 65-74; ABS. GER; BIBL. 9 REF.Article
NONSTOICHIOMETRY OF ZNSE AND CDSERAU H.1978; J. PHYS. CHEM. SOLIDS; GBR; DA. 1978; VOL. 39; NO 8; PP. 879-882; BIBL. 15 REF.Article
HIGH-EFFICIENCY BLUE LUMINESCENCE FROM MOCVD-GROWN ZNSE AT ROOM TEMPERATUREWIGHT DR; WRIGHT PJ; COCKAYNE B et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 593-595; BIBL. 6 REF.Article
METHODE DU DEPOT D'UN FILM MINCE DE SELENIURE DE ZINC POUR REVELER LA STRUCTURE DES ECHANTILLONS METALLIQUES. APPLICATIONS DU PROCEDE A LA MICROANALYSE PAR SONDE DE CASTAINGBARBIER R; ALLAIS R.1972; SCI. TECH. ARMEM.; FR.; DA. 1972; VOL. 46; NO 3; PP. 537-576; ABS. ANGL. ALLEM.; BIBL. 6 REF.Serial Issue
ZINC SELENIDE WINDOW FOR TRANSMISSION OF CO2 LASER RADIATION INTO MOIST GAS AT ELEVATED PRESSURESNELSON LS; DUDA PM.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 259-260; BIBL. 5 REF.Article
PROPRIETES PHOTOELECTRIQUES DES HETEROJONCTIONS ARSENIURE DE GALLIUM-SELENIURE DE ZINCDEMCHENKO AM.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2392-2395; BIBL. 11 REF.Article
THE EPITAXIAL GROWTH OF ZNSE ON SAPPHIRE SUBSTRATES.RATCHEVA TM; DRAGIEVA ID.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 579-585; ABS. RUSSE; BIBL. 22 REF.Article
HETERO-EPITAXIE DE ZNSE SUR GAAS PAR TRANSPORT EN TUBE OUVERT.CHEVRIER J; GALIBERT G; ETIENNE D et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 109-116; ABS. ANGL.; BIBL. 23 REF.Article
EXCITON RECOMBINATION PROCESSES IN ZINC SELENIDEDEAN PJ; WRIGHT PJ; COCKAYNE B et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 18; PP. 3493-3500; BIBL. 18 REF.Article
DIFFUSION A PLUSIEURS COMPOSANTES SUR UNE DOUBLE FREQUENCE DE LASER, STIMULEE PAR ZNSE PAR UNE IMPULSION LUMINEUSE ISOLEE DE L'ORDRE DE LA PICOSECONDEZYUL'KOV VA; GRIBKOVSKIJ VP.1983; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1983; VOL. 37; NO 4; PP. 179-182; BIBL. 3 REF.Article
NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITIONSTUTIUS W.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 246-248; BIBL. 11 REF.Article
THE VARIATION OF RESIDUAL IMPURITIES IN ZNSE CRYSTALS USED IN LIGHT-EMITTING DIODE FABRICATIONSKUN ZK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1248-1250; BIBL. 13 REF.Article
A NEW POLYTYPE OF ZINC SELENIDE CRYSTAL.MANNAMI M.1977; BULL. INST. CHEM. RES., KYOTO UNIV.; JAP.; DA. 1977; VOL. 55; NO 2; PP. 163-167; BIBL. 5 REF.Article
DIFFUSION RAMAN RESONNANTE DE LA LUMIERE DANS LES CRISTAUX DE ZN1-XCDXSEBALAKH M YA; LITVINCHUK AP; PEKAR' GS et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 4; PP. 1010-1012; BIBL. 5 REF.Article
ELECTRON-HOLE DROPS IN A2B6 COMPOUNDS WITH BLENDE TYPE STRUCTUREKUOKSTIS E; BALTRAMIEJUNAS R; VAITKUS J et al.1982; JOURNAL OF LUMINESCENCE; ISSN 0022-2313; NLD; DA. 1982; VOL. 26; NO 4; PP. 443-447; BIBL. 5 REF.Article
ION IMPLANTATION AND LUMINESCENCEBRYANT FJ.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 81-93; BIBL. 33 REF.Article
ELECTROABSORPTION IN ZNSE CUBIC CRYSTALSDAUNAY J; DAUNAY J et al.BAILLOU J; DAUNAY J; DAUNAY J et al.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 2; PP. 295-308; BIBL. 15 REF.Article
SURFACE EXCITON POLARITON IN ZNSE1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 1; PP. 145-153; BIBL. 23 REF.Article
THE ENERGY OF FORMATION OF ALKALI METAL ION INTERSTITIALS IN ZINC SELENIDEHARDING JH.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 33; PP. 5049-5054; BIBL. 17 REF.Article
THERMOLUMINESCENCE IN CONDUCTIVE N-TYPE ZNSE CRYSTALSOCZKOWSKI HL.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. 199-207; ABS. GER; BIBL. 30 REF.Article
DEEP LEVELS IN ZNSE/GAAS HETEROJUNCTIONSSHIRAKAWA Y; KUKIMOTO H.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5859-5863; BIBL. 18 REF.Article